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參數資料
| 型號： | DDTC114ECA |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR |
| 中文描述： | npn型預偏置信號小的SOT - 23表面貼裝晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 68K |
| 代理商： | DDTC114ECA |
DS30313 Rev. 3 - 2
1 of 3
DDTC (R1 = R2 SERIES) E
DDTC
(R1 = R2 SERIES)
E
NPN PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Types Available
(DDTA)
Built-In Biasing Resistors, R1 = R2
Characteristic
Symbol
V
CC
Value
50
-10 to +12
-10 to +30
-10 to +40
-10 to +40
-10 to +40
-10 to +40
100
100
50
30
100
20
150
833
-55 to +150
Unit
V
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
V
IN
V
Output Current DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
I
O
mA
P
d
R
JA
T
j
, T
STG
mW
C/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Mechanical Data
Case: SOT-523, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 2)
Weight: 0.002 grams (approx.)
Ordering Information (See Page 2)
T
C
U
D
O
R
P
W
E
N
IN
IN
R
1
R
2
GND
SCHEMATIC DIAGRAM
OUT
GND
OUT
P/N
R1, R2 (NOM) MARKING
2.2K
4.7K
10K
22K
47K
100K
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
N04
N08
N13
N17
N20
N24
SOT-523
Min
Dim
A
B
C
D
G
H
J
K
L
M
N
Max
Typ
0.15
0.30
0.22
0.75
0.85
0.80
1.45
1.75
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.00
0.10
0.05
0.60
0.80
0.75
0.10
0.30
0.22
0.10
0.20
0.12
0.45
0.65
0.50
0
8
All Dimensions in mm
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
A
M
J
L
D
B C
H
K
G
TOP VIEW
OUT
GND
IN
N
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相關代理商/技術參數 |
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|---|---|
| DDTC114ECA-7 | 功能描述:開關晶體管 - 偏壓電阻器 PRE-BIAS NPN 200mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTC114ECA-7-F | 功能描述:開關晶體管 - 偏壓電阻器 PRE-BIAS NPN 200mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTC114ECAQ-13-F | 制造商:Diodes Incorporated 功能描述:DIIDDTC114ECAQ-13-F PREBIAS TRANSISTOR S |
| DDTC114EE | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DDTC114EE-7 | 功能描述:開關晶體管 - 偏壓電阻器 PRE-BIAS NPN 150mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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