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參數(shù)資料
| 型號： | DDTD113ZC |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| 中文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | DDTD113ZC |
DS30384 Rev. 4 - 2
1 of 3
DDTD (xxxx) C
www.diodes.com
Diodes Incorporated
DDTD
(xxxx)
C
NPN PRE-BIASED 500 mA SOT-23
SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTB)
Built-In Biasing Resistors, R1, R2
Available in Lead Free/RoHS Compliant Version (Note 2)
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
OUT
3
2
1
IN
GND
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 3
Marking: Date Code and Marking Code
(See Table Below & Page 3)
Ordering Information (See Page 3)
Weight: 0.008 grams (approximate)
N
(2) IN
R
1
R
2
GND (1)
OUT (3)
P/N
R1 (NOM) R2 (NOM)
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
MARKING
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
Characteristic
Symbol
V
CC
Value
50
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
Unit
V
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
V
IN
V
Input Voltage, (1) to (2)
V
EBO (MAX)
5
V
Output Current All
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
I
C
P
d
R
JA
T
j
, T
STG
500
200
625
mA
mW
C/W
C
-55 to +150
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.89
1.00
0.45
0.61
0.085
0.110
0
8
All Dimensions in mm
2. No purposefully added lead.SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC
DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DDTD114GC | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| DDTD114TC | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| DDTD133HC | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| DDTD143EC | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| DDTD143EC-7 | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DDTD113ZC-13-F | 制造商:Diodes Incorporated 功能描述:PREBIASED TRANSISTOR SOT-23 R1<>R2 NPN 200MW 1KOHMS 10KOHMS - Tape and Reel |
| DDTD113ZC-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1KW 10KW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTD113ZC-7-F | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1K 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTD113ZU | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR |
| DDTD113ZU-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1KW 10KW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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