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參數資料
| 型號： | DE150-501N04A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET |
| 中文描述： | N溝道增強模式雪崩額定低Qg和RG高dv / dt的納秒級射頻功率MOSFET開關 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 77K |
| 代理商： | DE150-501N04A |
DE150-501N04A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
typ.
max.
R
G
5
C
iss
600
pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
50
pF
C
rss
5
pF
T
d(on)
4
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
(External)
4
ns
T
d(off)
4
ns
T
off
4
ns
Q
g(on)
16
40
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
2.0
6.0
nC
Q
gd
8.0
20
nC
R
thJHS
1.5
K/W
Source-Drain Diode
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
4.5
A
I
SM
Repetitive; pulse width limited by T
JM
27
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
≤
2%
1.4
V
T
rr
900
ns
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
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