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參數資料
| 型號： | DF2S8.2S |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產品使用，但對靜電放電（ESD）保護。 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 127K |
| 代理商： | DF2S8.2S |
DF2S8.2S
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S8.2S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z
2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150
*
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*
: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
= 5 mA
7.7
8.2
8.7
V
Dynamic impedance
Z
Z
I
Z
= 5 mA
―
―
30
Reverse current
I
R
V
R
= 6.5 V
―
―
0.5
μ
A
Total capacitance
C
T
V
R
=
0 V, f
=
1 MHz
―
20
―
pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit
(Top View)
7
Criterion: No damage to device elements
Unit: mm
C
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 0.001 g (typ.)
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
±30 kV
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