- 您現在的位置：買賣IC網 > PDF目錄376691 > DF3A3.3FE (Toshiba Corporation) Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP PDF資料下載
參數資料
| 型號： | DF3A3.3FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產品使用，但對靜電放電（ESD）保護。 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 158K |
| 代理商： | DF3A3.3FE |
DF3A3.3FE
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A3.3FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
= 5 mA
3.1
3.3
3.5
V
Dynamic impedance
Z
Z
I
Z
= 5 mA
130
Reverse current
I
R
V
R
=1 V
20
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
=
0 V, f
=
1 MHz
―
115
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30 kV
Criterion: No damage to device elements
Unit: mm
JEDEC
JEITA
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| DF3A3.3FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A3.3FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A3.6FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A3.6FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A3.6FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DF3A-3EP-2A | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-3EP-2C | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-3EP-2DS | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-3EP-2DSA | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-3EP-2H | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
發布緊急采購，3分鐘左右您將得到回復。