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參數資料
| 型號： | DF3A5.6FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產品使用，但對靜電放電（ESD）保護。 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 162K |
| 代理商： | DF3A5.6FE |
DF3A5.6FE
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A5.6FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
= 5mA
5.3
5.6
6.0
V
Dynamic impedance
Z
Z
I
Z
= 5mA
―
―
40
Ω
Reverse current
I
R
V
R
=2.5V
―
―
1.0
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0, f = 1MHz
―
65
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30kV
Criterion: No damage to device elements
Unit: mm
JEDEC
JEITA
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
相關PDF資料 |
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| DF3A5.6FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6LFE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.2FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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