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參數資料
| 型號： | DF3A5.6LFV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產品使用，但對靜電放電（ESD）保護。 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 136K |
| 代理商： | DF3A5.6LFV |
DF3A5.6LFV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
8 kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
6
4
1
μ
ZENER VOLTAGE VZ (V)
I
Z
– V
Z
0
1
8
10
7
5
2
3
10
μ
10 m
100 m
9
100
μ
1 m
Z
0
Ta
=
25°C
f
=
1 MHz
REVERSE VOLTAGE VR (V)
5
7
6
2
1
10
1
C
T
– V
R
3
4
T
AU
Q1
Q2
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| DF3A6.2FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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| DF3A6.2LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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