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參數(shù)資料
| 型號： | DF3A6.2FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護(hù)。 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 136K |
| 代理商： | DF3A6.2FV |
DF3A6.2FV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30kV
Judgment contents: No element destruction
Marking
Equivalent Circuit
(top view)
IZ - VZ
0
1
10
100
0
1
2
3
4
5
6
7
8
9
10
0.01
Ta=25°C
0.1
0.001
Z
ZENER VOLTAGE VZ (V)
CT - VR
10
100
0
2
4
6
8
Ta=25°C
f=1MHz
T
REVERSE VOLTAGE VR (V)
6.2
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| DF3A6.2LFE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.2LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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