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參數(shù)資料
| 型號： | DF3A8.2FV |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8.2 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | ULTRA COMPACT, 1-1Q1B, VESM, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 132K |
| 代理商： | DF3A8.2FV |
DF3A8.2FV
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Incorporating two devices in a single ultra-compact package reduces the
number of parts and lowers the mounting cost.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
*
T
j
T
stg
150
mW
Junction temperature
150
°C
Storage temperature range
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*
: Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
=
5 mA
7.7
8.2
8.7
V
Dynamic impedance
Z
Z
I
Z
=
5 mA
―
―
20
Ω
Reverse current
I
R
V
R
=
6.5 V
―
―
0.5
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0, f = 1MHz
―
38
―
pF
Unit: mm
1. CATHODE1
2. CATHODE2
3. ANODE
VESM
JEDEC
JEITA
TOSHIBA
1-1Q1B
Weight: 0.0015g (typ.)
1
2
3
1.2±0.05
0.8±0.05
0
0
1
0
0
0
0
0
0.5mm
0.45mm
0.45mm
0.4mm
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