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參數(shù)資料
| 型號(hào)： | DG213DJ |
| 英文描述： | Quad Complementary CMOS Analog Switch |
| 中文描述： | 四互補(bǔ)CMOS模擬開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 98K |
| 代理商： | DG213DJ |
DG213
2
Siliconix
S-56461—Rev. C, 29-Dec-97
Absolute Maximum Ratings
Voltages Referenced to V–
V+
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
V
S
, V
D
(V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
. . . . . . . . . . . . . . . . . .
Current, Any Terminal
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
100 mA
. . . . . . . . . . . . . . . . . . .
Storage Temperature
–65 to 125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
16-Pin Narrow SOIC
d
16-Pin TSSOP
d
470 mW
640 mW
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
All leads welded or soldered to PC Board.
Derate 6.5 mW/ C above 75 C
Derate 7.6 mW/ C above 75 C
b.
c.
d.
Specifications
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
15 V V
D Suffix
–40 to 85 C
Parameter
Symbol
Temp
a
Min
c
Typ
b
Max
c
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
V–
V+
V
Drain-Source On-Resistance
r
DS(on)
V
=
D
10 V, I
= 1 mA
S
Room
Full
45
60
85
r
DS(on)
Match
r
DS(on)
Room
1
2
Source Off Leakage Current
I
S(off)
V
S
=
14 V, V
D
=
14 V
Room
Full
–0.5
–5
0.01
0.5
5
Drain Off Leakage Current
I
D(off)
V
D
=
14 V, V
S
=
14 V
Room
Full
–0.5
–5
0.01
0.5
5
nA
Drain On Leakage Current
I
D(on)
V
S
= V
D
= 14 V
Room
Full
–0.5
–10
0.02
0.5
10
Digital Control
Input Voltage High
V
INH
Full
2.4
V
Input Voltage Low
V
INL
Full
0.8
Input Current
I
INH
or I
INL
V
INH
or V
INL
Full
–1
1
A
Input Capacitance
C
IN
Room
5
pF
Dynamic Characteristics
Turn-On Time
t
ON
V
= 2 V
See Figure 2
Room
85
130
Turn-Off Time
t
OFF
S
Room
55
100
ns
Break-Before-Make Time Delay
t
D
V
S
= 10 V, See Figure 3
Room
20
25
Charge Injection
Q
C
L
= 1000 pF, V
g
= 0 V, R
g
= 0
Room
1
pC
Source-Off Capacitance
C
S(off)
= 0 V f = 1 MHz
V
S
= 0 V, f = 1 MHz
Room
5
Drain-Off Capacitance
C
D(off)
Room
5
pF
Channel On Capacitance
C
D(on)
V
D
= V
S
= 0 V, f = 1 MHz
Room
16
Off Isolation
OIRR
C
= 15 pF, R
= 50
S
= 1 V
RMS
, f = 100 kHz
V
Room
90
dB
Channel-to-Channel Crosstalk
X
TALK
L
p ,
L
Room
95
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