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| 型號： | DG418L |
| 英文描述： | 35＜img src=http://dbserv.maxim-ic.com/images/ohm.gif width=12 height=9 SPST/SPDT.+3V Logic-Compatible Analog Switches |
| 中文描述： | 35Ω、SPST/SPDT、+3V邏輯兼容模擬開關(guān) |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 324K |
| 代理商： | DG418L |
D
35
, SPST/SPDT, +3V
Logic-Compatible Analog Switches
_______________________________________________________________________________________
5
Note 2:
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
Note 3:
-40
°
C specifications are guaranteed by design.
Note 4:
Flatness is defined as the difference between the maximum and the minimum value of on-resistance as measured at the
extremes of the specified analog range.
Note 5:
Leakage parameters are 100% tested at maximum rated hot temperature and guaranteed by correlation at T
A
= +25
°
C.
Note 6:
Guaranteed by design.
Note 7:
Off-isolation = 20log10 [V
COM
/ (V
NC
or V
NO
)], V
COM
= output, V
NC
or V
NO
= input to off switch.
Note 8:
Between Switches
ELECTRICAL CHARACTERISTICS
—
Single +12V Supply (continued)
(V+ = +12V, V- = 0, V
IH
= 2.0V, V
IL
= 0.8V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25
°
C.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
T
A
MIN
TYP
MAX
UNITS
DYNAMIC
+25
°
C
150
300
Turn-On Time
t
ON
V
N O
or V
N C
= +10V
R
L
= 300
C
L
= 35pF
Figure 1
DG417L
DG418L
T
MIN
to T
MAX
400
ns
+25
°
C
110
210
Turn-Off Time
t
OFF
V
N O
or V
N C
= +10V
R
L
= 300
C
L
= 35pF
Figure 1
DG417L
DG418L
T
MIN
to T
MAX
310
ns
+25
°
C
150
300
Transition Time
t
TRANS
V
NO
= 0, 10V
V
NC
= 10V, 0
R
L
= 300
C
L
= 35pF
Figure 2
DG419L
T
MIN
to T
MAX
400
ns
+25
°
C
5
30
Break-Before-Make Delay
(Note 6)
t
D
V
NO
, V
NC
= +10V
R
L
= 300
C
L
= 35pF
Figure 3
DG419L
T
MIN
to T
MAX
1
ns
Charge Injection
Q
V
GEN
= 0, R
GEN
= 0,
C
L
= 1nF, Figure 4
2.5
pC
POWER SUPPLY
Power-Supply Range
V
S
Single supply
9
36
1
V
+25
°
C
0.01
V+ = +13.2V
V
IN
= 0 or V+
T
MIN
to T
MAX
10
+25
°
C
15
60
Positive Supply Current
I+
V+ = +13.2V
V
IN
= 5V
T
MIN
to T
MAX
110
μA
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