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參數資料
| 型號： | DGS20-025AS |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Gallium Arsenide Schottky Rectifier |
| 中文描述： | 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 86K |
| 代理商： | DGS20-025AS |
2004 IXYS All rights reserved
1 - 3
4
IXYS reserves the right to change limits, test conditions and dimensions
DGS 19-025AS
DGS 20-025A(S)
DGSK 40-025A(S)
Type
Marking on product
Circuit
Package
DGS 19-025AS
19A250AS
DGS 20-025A
DGS 20-025AS
DGS 20-025A
DGS 20-025AS
DGSK 40-025A
DGSK 40-025AS
DGSK 40-025A
DGSK 40-025AS
I
DC
V
RRM
C
Junction
= 26 pF
= 18 A
= 250 V
Gallium Arsenide Schottky Rectifier
Single
Common cathode
Features
●
Low forward voltage
●
Very high switching speed
●
Low junction capacity of GaAs
- low reverse current peak at turn off
●
Soft turn off
●
Temperature independent switching
behaviour
●
High temperature operation capability
●
Epoxy meets UL 94V-0
Applications
●
MHz switched mode power supplies
(SMPs)
●
Small size SMPs
●
High frequency converters
●
Resonant converters
A
C
A
C
A
C
A
Single
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
V
RRM/RSM
250
V
I
FAV
I
FAV
T
C
= 25
°
C; DC
T
C
= 90
°
C; DC
18
13
A
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
30
A
T
VJ
T
stg
-55...+175
-55...+150
°
C
°
C
P
tot
T
C
= 25
°
C
48
W
M
d
mounting torque (TO-220)
0.4...0.6
Nm
Pulse test:
c
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode
unless otherwise specified
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
c
V
R
= V
RRM
;
V
R
= V
RRM
;
T
VJ
= 25°C
T
VJ
= 125°C
2.0
mA
mA
2.0
V
F
I
F
= 7.5 A;
I
F
= 7.5 A;
T
VJ
= 125°C
T
VJ
= 25°C
1.3
1.2
V
V
1.5
C
J
V
R
= 100 V; T
VJ
= 125°C
26
pF
R
thJC
R
thCH
3.1
K/W
TO-220
/263
0.5
K/W
Weight
TO-252
TO-220/263
0.3
g
g
2
A
A
TO-263 AB
C (TAB)
C
TO-220 AC
A
C (TAB)
TO-220 AB
A
C
A
C (TAB)
A
TO-252 AA
A
C (TAB)
A
A
TO-263 AB
C (TAB)
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| DGS20-018AS | Gallium Arsenide Schottky Rectifier |
| DGS20-022A | Gallium Arsenide Schottky Rectifier |
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