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參數資料
| 型號： | DGS9-03AS |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Gallium Arsenide Schottky Rectifier |
| 中文描述： | 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 56K |
| 代理商： | DGS9-03AS |
2004 IXYS All rights reserved
1 - 2
DGS 9-03AS
DGS 10-03A
4
Type
Marking on product
Circuit
Package
DGS 9-03AS
9A300AS
DGS 10-03A
DGS 10-03A
Symbol
Conditions
Maximum Ratings
V
RRM/RSM
300
V
I
FAV
I
FAV
T
C
= 25
°
C; DC
T
C
= 90
°
C; DC
11
8
A
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
20
A
T
VJ
T
stg
-55...+175
-55...+150
°
C
°
C
P
tot
T
C
= 25
°
C
34
W
M
d
mounting torque (TO-220)
0.4...0.6
Nm
Features
●
Low forward voltage
●
Very high switching speed
●
Low junction capacity of GaAs
- low reverse current peak at turn off
●
Soft turn off
●
Temperature independent switching
behaviour
●
High temperature operation capability
●
Epoxy meets UL 94V-0
Applications
●
MHz switched mode power supplies
(SMPs)
●
Small size SMPs
●
High frequency converters
●
Resonant converters
Pulse test:
c
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Gallium Arsenide Schottky Rectifier
I
FAV
V
RRM
C
Junction
= 9 pF
= 11 A
= 300 V
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
c
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
1.3
mA
mA
1.3
V
F
I
F
= 5 A;
I
F
= 5 A;
T
VJ
= 125°C
T
VJ
= 25°C
1.6
1.6
V
V
2
C
J
V
R
= 150 V; T
VJ
= 125°C
9
pF
R
thJC
R
thCH
4.4
K/W
TO-220
0.5
K/W
Weight
TO-252
TO-220
0.3
g
g
2
IXYS reserves the right to change limits, Conditions and dimensions.
A = Anode, C = Cathode , TAB = Cathode
C
TO-220 AC
A
C (TAB)
A
TO-252 AA
A
C (TAB)
A
C
A
C
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