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參數(shù)資料
| 型號： | DGSS10-06CC |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Gallium Arsenide Schottky Rectifier |
| 中文描述： | 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE |
| 封裝： | ISOPLUS220A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 68K |
| 代理商： | DGSS10-06CC |
2005 IXYS All rights reserved
1 - 3
5
DGSS 10-06CC
IXYS reserves the right to change limits, Conditions and dimensions.
Type
Marking on product
Circuit
Package
DGSS 10-06CC
DGSS 10-06CC
V
RRM
I
DC
C
Junction
= 10.7 pF
= 600 V
(2x300V)
= 25 A
Gallium Arsenide Schottky Rectifier
Second generation
ISOPLUS220
TM
Electrically Isolated Back Surface
Preliminary Data
Features
GaAs Schottky Diode with Enhanced
Barrier Height:
lowest operating forward voltage drop due
to additional injection of minority carriers
high switching speed
- low junction capacity of GaAs diode
independent from temperature
- short and low reverse recovery current
peak due to short lifetime of minority
carriers
- soft turn off
low leakage current
ISOPLUS220
TM
Package:
isolated back surface
low coupling capacy between pins
and heatsink
enlarged creepage
high reliability
industry standard outline
Applications
Power Factor Correction (PFC)
Switched Mode Power Supplies:
AC-DC converters
DC-DC converters
with:
high switching frequency
high efficiency
low EMI
for use e. g. in:
telecom
computer
automotive equipment
ISOPLUS220A
1 2
1
2
3
Data according to IEC 60747 and per diode unless otherwise specified
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 10 A;
I
F
= 10 A;
T
VJ
= 25°C
T
VJ
= 125°C
1.7
1.2
2.1
V
V
I
R
V
R
= V
RRM
;
V
R
= V
RRM
;
T
VJ
= 25°C
T
VJ
= 125°C
0.25 mA
25
μA
I
RM
t
rr
I
F
= 5 A;
V
R
= 150 V; T
VJ
= 125°C
-di
F
/dt = 150 A/μs;
1.4
23
A
ns
C
J
V
R
= 150 V; T
VJ
= 125°C
10.7
pF
R
thJC
5.2 K/W
Symbol
Conditions
Maximum Ratings
V
RRM/RSM
V
RRM/RSM
(between terminal 1 and 3)
600
300
V
V
I
FAV
I
FAV
T
C
= 25
°
C; DC
T
C
= 90
°
C; DC
25
15
A
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
80
A
P
tot
T
C
= 25
°
C
29
W
Diode
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