欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: DGT305RE
英文描述: GTO Thyristors - Reverse Blocking - Disc / Puk Devices
中文描述: GTO晶閘管-反向阻斷-光盤/北辰設備
文件頁數: 3/14頁
文件大?。?/td> 1188K
代理商: DGT305RE
DGT305RE
3/13
www.dynexsemi.com
CHARACTERISTICS
THERMAL RATINGS
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.20
-
0.018
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.075
o
C/W
Anode side cooled
o
C/W
0.12
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
6.0
5.0
–40
kN
o
C/W
Clamping force 5.5kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
-
900
V
RGM
= 16V, No gate/cathode resistor
μ
C
I
T
=600A, V
D
= 1200V,
Snubber Cap Cs = 1.5
μ
F,
di
GQ
/dt = 15A/
μ
s
R
L
= (Residual inductance 2.75
μ
H)
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
Min.
Max.
Units
-
2.5
V
At = V
DRM
, V
RG
= 2V
-
50
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
0.75
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
A
mA
mJ
160
-
V
D
= 1200V, I
T
= 600A,
I
FG
= 20A, rise time < 1.0
μ
s
R
L
= (Residual inductance 2.75
μ
H)
μ
s
1.1
-
-
2.5
μ
s
-
550
mJ
-
30
μ
s
μ
s
12
-
μ
s
13.5
-
-
1800
μ
C
At 600A peak, I
G(ON)
= 2A d.c.
相關PDF資料
PDF描述
DGT305SE GTO Thyristors - Asymmetric - Disc / Puk Devices
DH0008H Single Peripheral Driver
DH0035G PIN DIODE DRIVER|BIPOLAR|QUAD|12PIN|METAL
DH0034CH TTL-to-MOS Translator
DH0034D TTL-to-MOS Translator
相關代理商/技術參數
參數描述
DGT305RE18 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR
DGT305SE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GTO Thyristors - Asymmetric - Disc / Puk Devices
DGT305SE18 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR
DGT408BRP 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Reverse Blocking Gate Turn-off Thyristor Target Information
DGT408BRP4540 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Reverse Blocking Gate Turn-off Thyristor Target Information
主站蜘蛛池模板: 罗源县| 正宁县| 藁城市| 阿瓦提县| 天水市| 台州市| 大荔县| 台南县| 威信县| 淮阳县| 襄垣县| 丹寨县| 富宁县| 岳阳县| 特克斯县| 长宁区| 溆浦县| 宝应县| 遂溪县| 临夏市| 故城县| 太湖县| 洛川县| 久治县| 江都市| 盖州市| 福建省| 榆树市| 河南省| 洪湖市| 房产| 手游| 高邑县| 蒲城县| 镇康县| 昌都县| 永兴县| 贵溪市| 宕昌县| 文登市| 深州市|