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參數資料
| 型號： | DGT305SE |
| 英文描述： | GTO Thyristors - Asymmetric - Disc / Puk Devices |
| 中文描述： | GTO晶閘管-不對稱-光盤/北辰設備 |
| 文件頁數： | 2/14頁 |
| 文件大小： | 1188K |
| 代理商： | DGT305SE |
DGT305RE
2/13
www.dynexsemi.com
Conditions
4.0
80000
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
500
500
V/
μ
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
I
TSM
Symbol
Parameter
I
2
t
V
= 67% V
, I
T
= 700A, T
j
= 125
o
C, I
FG
> 20A,
Rise time < 1.0
μ
s
A/
μ
s
To 80% V
DRM
; R
GK
≤
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
-
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
6
50
-
20
10
-
-
μ
s
40
50
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
μ
s
A/
μ
s
kW
W
A
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= 67%V
DRM
, T
j
= 125
o
C, di
GQ
/dt =15A/
μ
s, Cs = 1.5
μ
F
RMS on-state current
A
A
A
700
240
373
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
400
V
Peak forward transient voltage during current
fall time
V
DP
V
D
= 67% V
DRM
, I
= 700A, T
j
= 125
o
C,
di
GQ
/dt =15A/
s, Cs = 1.5
μ
F
SURGE RATINGS
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