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參數(shù)資料
| 型號： | DH50254 |
| 廠商： | TEMEX COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 250 V, SILICON, PIN DIODE |
| 封裝： | F27D, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 47K |
| 代理商： | DH50254 |
12-24
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
SILICON PIN DIODES
Microwave applications
For fast switching, these passivated mesa diodes have a medium I layer (< 50 m).
FAST SWITCHING SILICON PIN DIODES
Case
typ.
min.
typ.
max
typ.
Cb =Cb =
max
C2a (1)
0.18 pF
0.12 pF
(2)
EH50151
55
150
0.04
0.06
2.0
200
20
DH50151
F27d
M208
50
EH50152
60
150
0.06
0.08
1.7
230
23
DH50152
F27d
M208
50
EH50153
70
150
0.08
0.12
1.5
300
30
DH50153
F27d
M208
45
EH50154
90
150
0.12
0.17
1.4
500
50
DH50154
F27d
M208
40
EH50155
110
150
0.17
0.23
1.0
550
55
DH50155
F27d
M208
35
EH50156
130
150
0.23
0.40
0.8
800
80
DH50156
F27d
M208
30
EH50157
150
0.40
0.60
0.6
950
95
DH50157
F27d
M208
30
EH50201
60
200
0.04
0.06
2.3
300
30
DH50201
F27d
M208
45
EH50202
65
200
0.06
0.08
2.1
400
40
DH50202
F27d
M208
45
EH50203
75
200
0.08
0.12
1.5
500
50
DH50203
F27d
M208
40
EH50204
100
200
0.12
0.17
1.3
650
65
DH50204
F27d
M208
35
EH50205
120
200
0.17
0.23
1.0
800
80
DH50205
F27d
M208
30
EH50206
150
200
0.23
0.40
0.8
950
95
DH50206
F27d
M208
30
EH50207
170
200
0.40
0.60
0.7
1050
100
DH50207
F27d
M208
25
EH50251
65
250
0.04
0.06
2.4
330
33
DH50251
F27d
M208
40
EH50252
75
250
0.06
0.08
2.2
500
50
DH50252
F27d
M208
40
EH50253
100
250
0.08
0.12
2.0
900
90
DH50253
F27d
M208
35
EH50254
130
250
0.12
0.17
1.4
900
90
DH50254
F27d
M208
30
EH50255
160
250
0.17
0.23
0.9
1000
100
DH50255
F27d
M208
30
EH50256
180
250
0.23
0.40
0.8
1150
110
DH50256
F27d
BH142
25
EH50401
80
400
0.04
0.06
2.5
700
70
DH50401
F27d
M208
35
EH50402
90
400
0.06
0.08
2.3
800
80
DH50402
F27d
M208
35
EH50403
120
400
0.08
0.12
2.1
1000
100
DH50403
F27d
M208
30
EH50404
150
400
0.12
0.17
1.8
1500
150
DH50404
F27d
BH142
25
EH50405
200
400
0.17
0.23
1.6
2000
200
DH50405
F27d
BH142
20
ELECTRICAL
Electrical characteristics
Description
(1) Chip presentation C2a, except:
Temperature ranges:
C2b for EH50256, EH50404 and EH50405
Operating junction (Tj)
: -55° C to +175° C
(2) Custom cases available on request
Storage
: -65° C to +200° C
(3) CT = Cj + Cb
Type
m
V
pF
ns
Type
Standard cases (2)
°C/W
Test
I
R = 10 A
V
R = 50 V
I
F = 10 mA
I
F = 10 MAIF = 20 mA
Pdiss
conditions
f = 1 MHz
f = 120 MHz I
R = 6 mA
V
R = 10 V
1 W
50
F27 d
Characteristics Gold Breakdown
Junction
Series
Minority
Reverse
Thermal
at 25°C
dia
voltage
capacitance
resistance
carrier
switching
resistance
lifetime
time
V
BR
Cj
R
SF
τ
I
T
CR
Rth
CHIP DIODES
CHIP AND PACKAGED DIODES
PACKAGED DIODES
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