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參數資料
| 型號： | DIM1200NSM17-E |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開關 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 169K |
| 代理商： | DIM1200NSM17-E |
DIM1200DDM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
PDS5603-1.4 June 2003
FEATURES
I
Trench Gate Field Stop Technology
I
Low Conduction Losses
I
Low Switching Losses
I
10
μ
s Short Circuit Withstand
I
Isolated MMC Base with AlN Substrates
I
High Thermal Cycling Capability
APPLICATIONS
I
High Reliability Inverters
G
Wind Turbines
G
Motor Controllers
G
UPS Systems
I
Traction
G
Propulsion Drives
G
Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200DDM17-E000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
μ
s short circuit withstand. This module is
optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200DDM17-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
*
Measured at auxiliary terminals.
1700V
2.0V
1200A
2400A
(typ)
(max)
(max)
DIM1200DDM17-E000
Dual Switch IGBT Module
Fig. 1 Dual switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
D
(See package details for further information)
3(C1)
5(E
1
)
6(G
1
)
7(C
1
)
12(C
2
)
11(G
2
)
10(E
2
)
1(E1)
4(E2)
2(C2)
1
3
2
4
12
11
10
7
6
5
8
9
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