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參數資料
| 型號： | DIM150WHS17-E |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 170K |
| 代理商： | DIM150WHS17-E |
DIM150CHS17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/8
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
10
5
15
20
25
30
35
40
45
50
55
60
70
65
75
0
50
100
150
200
Collector current, I
C
- (A)
S
s
Conditions:
T
case
= 125oC
V
cc
= 900V
R
g
= 10 ohms
E
on
E
off
E
rec
0
10
20
30
40
110
120
60
70
80
90
50
100
0
42
Gate resistance, R
g
- (ohms)
S
s
14
28
Conditions:
T
case
= 125oC
I
C
= 150A
V
cc
= 900V
E
on
E
off
E
rec
0
50
100
150
200
250
300
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
Common emitter
T
case
= 125C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
50
100
150
200
250
300
0
0.5
1.0
Collector-emitter voltage, V
ce
- (V)
1.5
2.0
2.5
3.0
3.5
4.0
C
C
Common emitter
T
case
= 25C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
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