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參數(shù)資料
型號(hào): DIM1600FSM12-A
英文描述: IGBT Modules - Single Switch
中文描述: IGBT模塊-單開(kāi)關(guān)
文件頁(yè)數(shù): 5/10頁(yè)
文件大小: 220K
代理商: DIM1600FSM12-A
DIM1600FSM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
180
300
250
200
80
18
150
750
90
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1600A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 1.5
L ~ 100nH
I
F
= 1600A, V
R
= 600V,
dI
F
/dt = 8200A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
350
350
220
150
350
900
160
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1600A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 1.5
L ~ 100nH
I
F
= 1600A, V
R
= 600V,
dI
F
/dt = 7500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DIM1600FSM12A00 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR
DIM1600FSM12-A000 制造商:DYNEX 制造商全稱(chēng):Dynex Semiconductor 功能描述:Single Switch IGBT Module
DIM1600FSM17-A 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:IGBT Modules - Single Switch
DIM1600FSM17A00 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR
DIM1600FSM17-A000 制造商:n/a 功能描述:IGBT Module
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