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參數(shù)資料
| 型號： | DIM1600NSM17-E |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開關(guān) |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 220K |
| 代理商： | DIM1600NSM17-E |
DIM1600FSM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
400
800
1200
1600
2000
2400
2800
3200
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward voltage, V
F
- (V)
F
F
V
F
is measured at power busbars
and not the auxiliary terminals
T
j
= 25
C
T
j
= 125
C
0
500
1000
1500
2000
2500
3000
3500
0
200
400
600
800
1000
1200
Collector emitter voltage, V
ce
- (V)
C
C
T
case
= 125
C
V
ge
=15V
R
g
= 1.5 Ohms
Module I
C
Chip I
C
0
200
400
600
800
1000
R
r
1200
1400
0
200
400
Reverse voltage, V
R
- (V)
600
800
1000
1200
1400
T
case
= 125
C
Fig. 10Transient thermal impedance
0.1
0.001
1
10
100
0.01
1
0.1
10
Pulse width, t
p
- (s)
T
t
°
C
Diode
Transistor
IGBT
Diode
R
i
(C/KW)
τ
i
(ms)
R
(C/KW)
τ
i
(ms)
1
0.28
0.12
0.62
0.11
2
2.00
3.89
4.63
4.24
3
2.82
47.15
6.48
48.75
4
3.91
257.21
8.26
256.75
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| DIM1800ESM12-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Single Switch |
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| DIM1800ESM12-A000 | 制造商:n/a 功能描述:IGBT Module |
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