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參數資料
| 型號： | DIM200BSS12-A |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開關 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 168K |
| 代理商： | DIM200BSS12-A |
DIM200BSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
50
20
240
95
25
2
30
150
13
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 70nH
I
F
= 200A, V
R
= 600V,
dI
F
/dt = 2300A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
800
70
27
385
110
40
50
160
20
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 70nH
I
F
= 200A, V
R
= 600V,
dI
F
/dt = 2000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
相關PDF資料 |
PDF描述 |
|---|---|
| DIM200PKM33-A | IGBT Modules - Chopper |
| DIM200PLM33-A | IGBT Modules - Chopper |
| DIM200WHS12-A | IGBT Modules - Half Bridge |
| DIM200WHS12-E | IGBT Modules - Half Bridge |
| DIM200WHS17-E | IGBT Modules - Half Bridge |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DIM200BSS17-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Single Switch |
| DIM200MBS12-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Bi-directional Switch |
| DIM200MHS17-A000 | 制造商:n/a 功能描述:IGBT Module |
| DIM200MLS17-A000 | 制造商:n/a 功能描述:IGBT Module |
| DIM200PHM33-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Half Bridge |
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