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參數(shù)資料
| 型號(hào)： | DIM400PHM17-A |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大小： | 265K |
| 代理商： | DIM400PHM17-A |
DIM400GCM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
0
100
200
300
400
500
600
700
800
0
0.5
1
1.5
2
2.5
3
3.5
4
Forward voltage, V
F
- (V)
F
F
T
j
= 25
C
T
j
= 125
C
V
F
is measured at power busbars
and not the auxiliary terminals
0
100
200
300
400
500
600
700
800
900
0
500
1000
Collector emitter voltage, V
ce
- (V)
1500
2000
2500
3000
3500
C
C
T
case
= 125C
V
ge
= ±15V
R
g(min)
= 4.7
Module
Chip
0
100
200
300
400
500
600
700
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
R
r
0.1
0.001
10
100
0.01
1
0.1
10
Pulse width, t
p
- (s)
T
t
°
C
IGBT
Diode
R
(C/KW)
τ
i
(ms)
R
(C/KW)
τ
i
(ms)
1
0.89
0.13
1.79
0.13
2
5.63
5.80
11.26
5.80
3
7.88
48.03
15.77
48.03
4
9.56
248.53
19.11
248.53
Diode
Transistor
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PDF描述 |
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| DIM400WHS12-A | IGBT Modules - Half Bridge |
| DIM400WHS12-E | IGBT Modules - Half Bridge |
| DIM400WHS17-A | IGBT Modules - Half Bridge |
| DIM400WHS17-E | IGBT Modules - Half Bridge |
| DIM500BSS06-S | IGBT Modules - Single Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DIM400PHM17-A000 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Half Bridge IGBT Module |
| DIM400WHS12-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Half Bridge |
| DIM400WHS12A000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM400WHS12-E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Modules - Half Bridge |
| DIM400WHS12E000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
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