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參數(shù)資料
| 型號(hào)： | DKF110PFW1STES |
| 廠商： | Fujitsu Limited |
| 英文描述： | Solid-State Fingerprint Sensor |
| 中文描述： | 固態(tài)指紋傳感器 |
| 文件頁(yè)數(shù)： | 5/24頁(yè) |
| 文件大?。?/td> | 240K |
| 代理商： | DKF110PFW1STES |
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The sensor array is composed of 300 rows and 300 columns of sensor
plates. Associated with each column are two sample-and-hold
circuits. A fingerprint image is sensed or captured one row at a time.
This “row capture”occurs in two phases. In the first phase, the
sensor plates of the selected row are pre-charged to the V
During this pre-charge period, an internal signal enables the first set
of sample-and-hold circuits to store the pre-charged plate voltages of
the row.
MBF110
Fujitsu Microelectronics, Inc.
1
Figure 1.
MBF110 Block Diagram
OSCILLATOR
DATA
BUS
BUFFER
DCR
RAH
RAL
CAH
CAL
RSR
DTR
300 x 300
Sensor Arrays
CONTROL LOGIC
MUX
8 Bit A/D
Temperature
Sensor
Resistance
Sensor
CLK OUT
SELECT
LOGIC
A[3:0]
CE1
CE2
RD
WR
D[7:0]
TEST
XTAL1
XTAL2
ENCLK
RSENSE
CLK
SETCUR
Chip Operation
DD
voltage.
In the second phase, the row of sensor plates is discharged with a
current source. The rate at which a cell is discharged is proportional
to the “discharge current.”After a period of time (referred to as the
“discharge time”), an internal signal enables the second set of
sample-and-hold circuits to store the final plate voltages. The
difference between the pre-charged and discharged plate voltages is a
measure of the capacitance of a sensor cell. After the row capture, the
cells within the row are ready to be digitized.
The sensitivity of the chip is adjusted by changing the discharge
current and discharge time. The nominal value of the current source
is controlled by an external resistor connected between the SETCUR
pin and ground. The current source is controlled from the Discharge
Current Register (DCR). The discharge time is controlled by the
Discharge Time Register (DTR).
The sensor array is a row-oriented device. Images are read out one
row at a time. The High-Order Row Address Register (RAH) and the
Low-Order Row Address Register (RAL) must be programmed to
select a row to be captured. Writing to RAL initiates a row capture.
The capture time is a function of the external clock and the DTR.
After the discharge cycle, the outputs of the row elements will be
stored in analog sample and hold circuits.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DKF110PFW1STG | Solid-State Fingerprint Sensor |
| DKF110PFWLPES | Solid-State Fingerprint Sensor |
| DKF110PFWLPG | Solid-State Fingerprint Sensor |
| DKF110PFWSTES | Solid-State Fingerprint Sensor |
| DKF110PFWSTG | Solid-State Fingerprint Sensor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DKF110PFW1STG | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Solid-State Fingerprint Sensor |
| DKF110PFWLPES | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Solid-State Fingerprint Sensor |
| DKF110PFWLPG | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Solid-State Fingerprint Sensor |
| DKF110PFWSTES | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Solid-State Fingerprint Sensor |
| DKF110PFWSTG | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Solid-State Fingerprint Sensor |
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