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參數資料
| 型號： | DM-232 |
| 廠商： | Sony Corporation |
| 英文描述： | Magnetoresistance Element |
| 中文描述： | 磁阻元件 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 96K |
| 代理商： | DM-232 |
—2—
DM-232
Equivalent Circuit
1V
CC
R
D
R
A
R
B
R
C
2
V
A
3
4
V
B
GND
Basic Performance
1) Operation principle
Device internal structure
(Back of mark face)
Bias magnetic field
H=14400A/m
AAAAAA
A
A
A
R
R
D
1
2
3
4
R
C
External magnetic field H
Synthetic magnetic field (b)
External magnetic field H
Synthetic
magnetic field (a)
Bias magnetic field
1
2
3
4
2) Power supply pin and output pin
3) Sensitivity direction
232
1
3
2
4
1
V
CC
Out put
Differential amplifier
GND
2
4
3
Sensitive
Non-Sensitive
Various resistances change according to the direction of
the combnied bias and external magnetic field.
) When the direction of the synthetic magnetic field is (a),
R
A
,R
C
: Minimum resistance
R
B
,R
D
: Maximum resistance
) When the direction of the synthetic magnetic field is (b),
R
A
,R
C
: Maximum resistance
R
B
,R
D
: Minimum resistance
The ferromagnetic magnetoresistance element differs
from the semiconductor magnetoresistance element and
hole element in that it responds only to the magnetic
field within the element's surface. It is not sensitive to
the magnetic field perpendicular to the element.
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