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參數資料
| 型號： | DME150 |
| 英文描述： | TRANSISTOR | BJT | NPN | 15A I(C) | FO-57CVAR |
| 中文描述： | 晶體管|晶體管|叩| 15A條一（c）|佛57CVAR |
| 文件頁數： | 1/3頁 |
| 文件大小： | 284K |
| 代理商： | DME150 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
DME 150
150 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The DME 150 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and ouput prematch for
broadband capabilit. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55AY, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 290 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 15 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 150 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10
μ
sec
DF = 1%
F = 1090 MHz
150
7.8
8.3
40
25
20:1
Watts
Watts
dB
%
BVebo
BVces
Cob
h
FE
θ
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 25 mA
Vcb = 50 Volts
Ic = 250 mA, Vce = 5 V
4.0
55
20
0.6
Volts
Volts
pF
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June 1, 1994
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| DMEG250 | TRANSISTOR | BJT | NPN | 30A I(C) | FO-231VAR |
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相關代理商/技術參數 |
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| DME1737 | 制造商:SMSC 制造商全稱:SMSC 功能描述:SUPER I/O WITH TEMPERATURE |
| DME1737-NR | 制造商:Rochester Electronics LLC 功能描述: 制造商:SMSC 功能描述: |
| DME1737-NW | 功能描述:輸入/輸出控制器接口集成電路 Super I/O RoHS:否 制造商:Silicon Labs 產品: 輸入/輸出端數量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
| DME1P47K | 功能描述:薄膜電容器 .47UF 100V 10% RoHS:否 制造商:Cornell Dubilier 產品類型:General Purpose 電介質:Polyester 電容:0.47 uF 容差:10 % 電壓額定值:100 V 系列:DME 工作溫度范圍: 端接類型:Radial 引線間隔: |
| DME1P47K-F | 功能描述:薄膜電容器 0.47uF 100V 10% RoHS:否 制造商:Cornell Dubilier 產品類型: 電介質:Polyester 電容:0.047 uF 容差:10 % 電壓額定值:100 V 系列:225P 工作溫度范圍:- 55 C to + 85 C 端接類型:Radial 引線間隔:9.5 mm |
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