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參數資料
| 型號： | DMMT5551S |
| 廠商： | Diodes Inc. |
| 英文描述： | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 匹配npn型小信號晶體管表面貼裝 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 77K |
| 代理商： | DMMT5551S |
DS30436 Rev. 4 - 2
1 of 3
DMMT5551/DMMT5551S
www.diodes.com
Diodes Incorporated
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Medium Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
1% Matched Tolerance, Available (Note 2)
Available in Lead Free/RoHS Compliant Version (Note 5)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
Value
180
160
6.0
200
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
K/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
F
B C
H
K
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 9, on Page 2
Marking (See Page 2): K4R & K4T
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Notes: 1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
4. Maximum combined dissipation. 5. No purposefully added lead.
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
0
8
All Dimensions in mm
T
C
U
D
O
R
P
W
E
N
C
2
E
1
C
1
B
2
E
2
B
1
C
2
E
2
E
1
B
2
B
1
C
1
DMMT5551
(K4R Marking Code)
DMMT5551S
(K4T Marking Code)
SPICE MODEL: DMMT5551
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DMMT5551S-13 | 制造商:Diodes Incorporated 功能描述:P-CHANNEL, SOT-23, 60V, LL, 8OHM,130MA, SMT - Tape and Reel |
| DMMT5551S-13-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 160V 0.2A 6PIN SOT-26 - Tape and Reel |
| DMMT5551S-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DMMT5551S-7-F | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DMMT5551-TP | 功能描述:TRANSISTOR NPN 200MA 160V SOT363 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
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