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參數資料
| 型號： | DMN2114SN |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 176K |
| 代理商： | DMN2114SN |
DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N
Features
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
Mechanical Data
Case: SC-59
Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.008 grams (approximate)
SC-59
Dim
Min
Max
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
G
1.70
2.10
H
2.70
3.10
J
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
α
0
°
8
°
All Dimensions in mm
ESD protected
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
V
GSS
20
V
Gate-Source Voltage Continuous
Drain Current
Total Power Dissipation
±
12
1.2
4.0
500
V
Continuous
Pulsed
I
D
A
P
d
R
θ
JA
T
j
, T
STG
mW
Thermal Resistance, Junction to Ambient
250
°
C /W
°
C
Operating and Storage Temperature Range
-55 to +150
Notes:
1. Pulse width
≤
300
μ
S, duty cycle
≤
2%.
2. No purposefully added lead.
3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30829 Rev. 3 - 2
1 of 4
www.diodes.com
DMN2114SN
Diodes Incorporated
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DMN2114SN_0709 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2114SN-7 | 功能描述:MOSFET 20V 1.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN2170U | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2170U-7 | 功能描述:MOSFET 600mW 20Vdss RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN21D2UFB-7B | 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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