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參數資料
| 型號： | DMN5L06VAK |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 164K |
| 代理商： | DMN5L06VAK |
ESD protected up to 2kV
Lead-free Green
DS30769 Rev. 2 - 2
1 of 5
DMN5L06VK/VAK
www.diodes.com
Diodes Incorporated
DMN5L06VK/VAK
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
ESD Protected Up To 2kV
Mechanical Data
Very
Low Gate Threshold Voltage
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage R
GS
≤
1.0M
V
DGR
50
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±
20
±
40
V
Drain Current (Note 1)
Continuous
I
D
280
mA
Drain Current (Note 1) Pulsed
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
A
M
L
B C
H
K
G
D
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
Matte Tin annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
.
C
U
D
O
R
P
W
E
N
G
1
D
1
D
2
S
2
S
1
G
2
DMN5L06VAK
(KAE Type Code)
SOT-563
Min
0.15
Dim
A
B
C
D
G
H
K
L
M
Max
0.30
Typ
0.25
1.10
1.25
1.20
1.55
1.70
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.56
0.60
0.60
0.10
0.30
0.20
0.10
0.18
All Dimensions in mm
S
1
D
1
D
2
S
2
G
1
G
2
DMN5L06VK
(KAB Type Code)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DMN5L06VAK-7 | 功能描述:MOSFET 20V 280mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06VK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06VK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06W | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06W-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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