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參數資料
| 型號： | DMN5L06WK-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, PLASTIC PACKAGE -3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 140K |
| 代理商： | DMN5L06WK-7 |
Lead-free Green
DS30928 Rev. 2 - 2
1 of 5
DMN5L06WK
www.diodes.com
Diodes Incorporated
DMN5L06WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
50
V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
300
800
mA
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10 S, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Mechanical Data
A
M
J
L
E
D
B C
H
K
G
G
S
D
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
N
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.006 grams (approximate)
Low On-Resistance: R
DS(ON)
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
ESD protected up to 2kV
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.25
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.18
0
8
All Dimensions in mm
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| DMN601DMK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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