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參數資料
| 型號： | DN2625 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FETs |
| 中文描述： | N溝道耗盡型場效應管垂直的DMOS |
| 文件頁數： | 1/7頁 |
| 文件大小： | 889K |
| 代理商： | DN2625 |
DN2625
Features
Very low gate threshold voltage
Design to be source-driven
Low switching losses
Low effective output capacitance
Design for inductive load
Well matched for low second harmonic
Applications
Medical ultrasound beamforming
Ultrasonic array focusing transmitter
Piezoelectric transducer waveform drivers
High speed arbitrary waveform generator
Normally-on switches
Solid state relays
Constant current sources
Power supply circuits
General Description
The Supertex DN2625 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
N-Channel Depletion-Mode Vertical DMOS FETs
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
GEN
0V
-10V
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
I
(continuous)
1
(A)
I
(pulsed)
(A)
R
ΘjA
(
O
C/W)
2
R
ΘjC
(
O
C/W)
I
DR
(A)
1
I
DRM
(A)
D-PAK
1.1
3.3
50
45
5.5
4.0
1.1
3.3
14-Lead QFN
Notes:
1. I
(Continuous) is limited by Max. T
2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
相關PDF資料 |
PDF描述 |
|---|---|
| DN2625K4-G | N-Channel Depletion-Mode Vertical DMOS FETs |
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| DN2640 | N-Channel Depletion-Mode Vertical DMOS FETs |
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| DN304 | Optoelectronic |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DN2625DK6-G | 功能描述:MOSFET N-CHANNEL DEPLETION MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DN2625DK6-G M932 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET 250V 8-Pin |
| DN2625K4-G | 功能描述:MOSFET 250V 3.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DN2625K6 | 制造商:Supertex Inc 功能描述: |
| DN2625K6-G | 功能描述:MOSFET 250V 3.3A DMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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