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參數資料
| 型號： | DN3535N8-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FETs |
| 中文描述： | 0.23 A, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | SAME AS SOT-89, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 449K |
| 代理商： | DN3535N8-G |
DN3535
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
General Description
This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven
silicon-gate
manufacturing
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
process.
This
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
BV
DSX
/
BV
DGX
R
(max)
I
(min)
Package Options
TO-243AA
1
DN3535N8
DN3535N8-G
350V
10Ω
200mA
-G indicates package is RoHS compliant (‘Green’)
1
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
N-Channel Depletion-Mode Vertical DMOS FETs
Package Option
TO-243AA
(top view)
G
D
S
D
相關PDF資料 |
PDF描述 |
|---|---|
| DN3535 | N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓250V,N溝道耗盡型垂直DMOS場效應管) |
| DN3535 | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3535N8 | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3535NW | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3545N3-G | N-Channel Depletion-Mode Vertical DMOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DN3535NW | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3545 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3545_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FET |
| DN3545N3 | 功能描述:MOSFET 450V 20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DN3545N3-G | 功能描述:MOSFET 450V 20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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