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參數(shù)資料
| 型號： | DRDNB21D |
| 廠商： | Diodes Inc. |
| 英文描述： | COMPLEX ARRAY FOR DUAL RELAY DRIVER |
| 中文描述： | 一系列復雜的雙繼電器驅(qū)動器 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 101K |
| 代理商： | DRDNB21D |
Lead-free Green
DS30756 Rev. 3 - 2
1 of 5
DRDNB21D
www.diodes.com
Diodes Incorporated
DRDNB21D
COMPLEX ARRAY FOR DUAL RELAY DRIVER
A
M
J
L
D
F
B C
H
K
Mechanical Data
N
Epitaxial Planar Die Construction
Two Pre-Biased Transistors and Two Switching Diodes,
Internally Connected in One Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
Case: SOT-363
Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over
Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.006 grams (approximate)
Maximum Ratings, Total Device
Characteristic
Symbol
P
d
R
JA
T
j
, T
STG
Value
200
625
-55 to +150
Unit
mW
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Junction Temperature Range
C/W
C
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
CC
V
in
I
O
I
C
Value
50
-5 to +12
100
200
Unit
V
V
mA
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - Continuous (Note 3)
Maximum Ratings, Pre-Biased NPN Transistor
@ T
A
= 25 C unless otherwise specified
Features
R1 = R3 = 2.2k
R2 = R4 = 47k
(nominal)
(nominal)
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
.
1
3
2
6
5
4
R 4
R 3
R 2
R 1
1
2
3
4
5
6
D 1
D 2
Q 1
Q 2
R 2
R 4
R 3
R 1
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
0
8°
All Dimensions in mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DRDNB21D-7 | 功能描述:穩(wěn)壓二極管 DUAL RELAY RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| DRDNB26W | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEX ARRAY FOR RELAY DRIVERS |
| DRDNB26W-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN Trans R1-R2 Switch-Relay Drvr RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DRDP006W | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEX ARRAY FOR RELAY DRIVERS |
| DRDP006W-7 | 功能描述:兩極晶體管 - BJT PNP Trans/Switch Diode-Relay Drvr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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