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參數(shù)資料
| 型號： | DRV591GQE |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 1/19頁 |
| 文件大?。?/td> | 256K |
| 代理商： | DRV591GQE |
DRV591
SLOS389 – NOVEMBER 2001
±
3-A HIGH-EFFICIENCY PWM POWER DRIVER
1
www.ti.com
FEATURES
±
3-A Maximum Output Current
Low Supply Voltage Operation: 2.8 V to 5.5 V
High Efficiency Generates Less Heat
Over-Current and Thermal Protection
Fault Indicators for Over-Current, Thermal and
Under-Voltage Conditions
Two Selectable Switching Frequencies
Internal or External Clock Sync
PWM Scheme Optimized for EMI
9
×
9 mm PowerPAD
Quad Flatpack or
5
×
5 mm MicroStar Junior
Packages
APPLICATIONS
Thermoelectric Cooler (TEC) Driver
Laser Diode Biasing
DESCRIPTION
The DRV591 is a high-efficiency, high-current power
amplifier ideal for driving a wide variety of thermo-
electric cooler elements in systems powered from 2.8 V
to 5.5 V. PWM operation and low output stage
on-resistance significantly decrease power dissipation
in the amplifier.
The DRV591 is internally protected against thermal and
current overloads. Logic-level fault indicators signal
when
the
junction
temperature
approximately 130
°
C to allow for system-level
shutdown before the amplifier’s internal thermal
shutdown circuitry activates. The fault indicators also
signal when an over-current event has occurred. If the
over-current circuitry is tripped, the DRV591
automatically resets (see application information
section for more details).
has
reached
The PWM switching frequency may be set to 500 kHz
or 100 kHz depending on system requirements. To
eliminate external components, the gain is fixed at
approximately 2.34 V/V.
1
μ
F
AVDD
AGND (Connect to PowerPAD)
ROSC
COSC
AREF
IN+
IN–
F
F
P
P
P
O
O
O
OUT–
PGND
PGND
PGND
PGND
PGND
PGND
OUT+
O
O
O
P
P
P
F
120 k
220 pF
1
μ
F
Shutdown Control
1 k
1 k
DC Control
Voltage
10
μ
F
VDD
10
μ
H
10
μ
F
10
μ
H
10
μ
F
1
μ
F
FAULT1
FAULT0
To TEC or Laser
Diode Anode
To TEC or Laser
Diode Cathode
1
μ
F
SHUTDOWN
I
E
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
PowerPAD and MicroStar Junior are trademarks of Texas Instruments.
Copyright
2001, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DRV591VFP | 功能描述:功率驅(qū)動器IC High Efficiency PWM Power Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| DRV591VFP(1) | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-A HIGH-EFFICIENCY PWM POWER DRIVER |
| DRV591VFP | 制造商:Texas Instruments 功能描述:PWM POWER DRIVER SMD HLQFP32 591 |
| DRV591VFP1 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-A HIGH-EFFICIENCY PWM POWER DRIVER |
| DRV591VFPG4 | 功能描述:功率驅(qū)動器IC High Efficiency PWM Power Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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