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參數資料
| 型號： | DS1250ABL-100 |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數： | 1/11頁 |
| 文件大小： | 189K |
| 代理商： | DS1250ABL-100 |
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101501
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 512k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full 10% V
CC
operating range (DS1250Y)
Optional 5% V
CC
operating range
(DS1250AB)
Optional industrial temperature range of
-40 C to +85 C, designated IND
JEDEC standard 32-pin DIP package
PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
SRAM products
-
Detachment feature on PCM allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A18
DQ0 - DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DS1250Y/AB
4096k Nonvolatile SRAM
www.maxim-ic.com
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14
15
16
1
2
3
4
5
6
7
8
9
10
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12
31
30
29
28
27
26
25
24
23
22
21
20
32-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
GND
DQ0
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
32
19
18
17
A16
A18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
NC
A15
A16
NC
V
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
A17
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34
A18
GND
V
BAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關PDF資料 |
PDF描述 |
|---|---|
| DS1250ABL-100-IND | NVRAM (Battery Based) |
| DS1250ABL-70 | NVRAM (Battery Based) |
| DS1250ABL-70-IND | NVRAM (Battery Based) |
| DS1250ABP-100 | NVRAM (Battery Based) |
| DS1254 | 2M x 8 NV SRAM with Phantom Clock |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1250ABL-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1250ABL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1250ABL-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1250ABP-100 | 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1250ABP-100+ | 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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