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參數資料
| 型號： | DS1265W-100 |
| 英文描述： | 3.3V 8Mb Nonvolatile SRAM |
| 中文描述： | 3.3和8Mb非易失SRAM |
| 文件頁數： | 1/8頁 |
| 文件大小： | 155K |
| 代理商： | DS1265W-100 |
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110602
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 100ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Optional industrial (IND) temperature range
of -40 C to +85 C
PIN ASSIGNMENT
PIN DESCRIPTION
A0–A19
DQ0–DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
- No Connect
DESCRIPTION
The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor interfacing.
DS1265W
3.3V 8Mb Nonvolatile SRAM
www.maxim-ic.com
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2
3
4
5
6
7
8
9
10
11
12
35
34
33
32
31
30
29
28
27
26
25
24
36-Pin Encapsulated Package
740mil Extended
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
36
23
22
21
NC
NC
DQ0
DQ1
GND
DQ2
DQ3
DQ4
19
20
相關PDF資料 |
PDF描述 |
|---|---|
| DS1265W-100-IND | 3.3V 8Mb Nonvolatile SRAM |
| DS1265W-150 | 3.3V 8Mb Nonvolatile SRAM |
| DS1265W-150-IND | 3.3V 8Mb Nonvolatile SRAM |
| DS1275N | Transceiver |
| DS1275SN | Transceiver |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1265W-100+ | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W-100IND | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 8Mb Nonvolatile SRAM |
| DS1265W-100IND+ | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W-150 | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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