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參數(shù)資料
型號: DS1330ABP-70
廠商: DALLAS SEMICONDUCTOR
元件分類: Static RAM
英文描述: 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
封裝: POWERCAP MODULE-34
文件頁數(shù): 1/11頁
文件大小: 218K
代理商: DS1330ABP-70
1 of 11
111999
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power loss
Power supply monitor resets processor when
VCC power loss occurs and holds processor in
reset during VCC ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
A
Upgrade for 32k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full
±10% V
CC operating range (DS1330Y)
or optional
±5% V
CC operating range
(DS1330AB)
Optional industrial temperature range of
-40
°C to +85°C, designated IND
New PowerCap Module (PCM) package
Directly surface-mountable module
Replaceable snap-on PowerCap provides
lithium backup battery
Standardized pinout for all nonvolatile SRAM
products
Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
RST
- Reset Output
BW
- Battery Warning
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1330 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as
32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. Additionally, the DS1330 devices have dedicated circuitry for monitoring the
status of VCC and the status of the internal lithium battery. DS1330 devices in the PowerCap Module
package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a
complete Nonvolatile SRAM module. The devices can be used in place of 32K x 8 SRAM, EEPROM or
Flash components.
DS1330Y/AB
256k Nonvolatile SRAM
www.dalsemi.com
1
BW
2
3
NC
RST
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
4
5
6
7
8
9
10
11
12
13
14
15
16
17
NC
A14
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34
NC
GND
VBAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關(guān)PDF資料
PDF描述
DS1330WP-150 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
DS1330YP-70 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1345ABP-70 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1345WP-150 128K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
DS1345YP-100 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1330ABP-70+ 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330ABP-70IND 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330ABP-70-IND 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor
DS1330ABP-70IND+ 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1330BL-100 功能描述:IC NVSRAM 256KBIT 100NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN(2x3) 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
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