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參數(shù)資料
| 型號(hào)： | DS1330YP-100 |
| 英文描述： | 256k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 256k非易失SRAM與電池監(jiān)視器 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 191K |
| 代理商： | DS1330YP-100 |
1 of 11
110201
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power loss
Power supply monitor resets processor when
V
CC
power loss occurs and holds processor in
reset during V
CC
ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70ns
Unlimited write cycle endurance
Typical standby current 50 A
Upgrade for 32k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full 10% V
CC
operating range (DS1330Y)
or optional 5% V
CC
operating range
(DS1330AB)
Optional industrial temperature range of
-40 C to +85 C, designated IND
PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile (NV)
SRAM products
-
Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 – A14
DQ0 – DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Reset Output
- Battery Warning
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8
bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly
monitors V
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium energy source
is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
Additionally, the DS1330 devices have dedicated circuitry for monitoring the status of V
CC
and the status
of the internal lithium battery. DS1330 devices in the PowerCap module package are directly surface
mountable and are normally paired with a DS9034PC PowerCap to form a complete NV SRAM module.
The devices can be used in place of 32k x 8 SRAM, EEPROM, or Flash components.
DS1330Y/AB
256k Nonvolatile SRAM
with Battery Monitor
www.maxim-ic.com
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
BW
NC
NC
RST
V
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34
NC
GND
V
BAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1330YP-70 | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330YP-70-IND | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330BL-70-IND | NVRAM (Battery Based) |
| DS1330WP-150 | NVRAM (Battery Based) |
| DS1330YL-100 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1330YP-100+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1330YP-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1330YP-70 | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1330YP-70+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1330YP-70IND | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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