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參數資料
| 型號： | DS1350YP-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| 封裝： | POWERCAP MODULE-34 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 228K |
| 代理商： | DS1350YP-70 |
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111999
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power loss
Power supply monitor resets processor when
VCC power loss occurs and holds processor in
reset during VCC ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
A
Upgrade for 512k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full
±10% V
CC operating range (DS1350Y)
or optional
±5% V
CC operating range
(DS1350AB)
Optional industrial temperature range of
-40
°C to +85°C, designated IND
New PowerCap Module (PCM) package
-
Directly surface-mountable module
-
Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A18
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
RST
- Reset Output
BW
- Battery Warning
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as
524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. Additionally, the DS1350 devices have dedicated circuitry for monitoring the
status of VCC and the status of the internal lithium battery. DS1350 devices in the PowerCap Module
package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a
complete Nonvolatile SRAM module. The devices can be used in place of 512k x 8 SRAM, EEPROM or
Flash components.
DS1350Y/AB
4096k Nonvolatile SRAM
with Battery Monitor
www.dalsemi.com
1
BW
2
3
A15
A16
RST
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
4
5
6
7
8
9
10
11
12
13
14
15
16
17
A17
A14
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34
A18
GND
VBAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相關PDF資料 |
PDF描述 |
|---|---|
| DS1350ABP-70 | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1384FP-12 | 1 TIMER(S), REAL TIME CLOCK, PQFP44 |
| DS1386-32-120 | 0 TIMER(S), REAL TIME CLOCK, PDIP32 |
| DS14285QN | 1 TIMER(S), REAL TIME CLOCK, PQCC28 |
| DS14285S | 1 TIMER(S), REAL TIME CLOCK, PDSO24 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1350YP-70+ | 功能描述:NVRAM 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1350YP-70IND | 功能描述:NVRAM 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1350YP-70-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1350YP-70IND+ | 功能描述:NVRAM 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1350YP-C01 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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