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參數資料
| 型號： | DS2224Z |
| 英文描述： | EconoRAM |
| 中文描述： | EconoRAM |
| 文件頁數： | 1/10頁 |
| 文件大小： | 102K |
| 代理商： | DS2224Z |
DS2223/DS2224
EconoRAM
DS2223/DS2224
080598 1/10
FEATURES
Low–cost, general–purpose, 256–bit memory
– DS2223 has 256–bit SRAM
– DS2224 has 32–bit ROM, 224–bit SRAM
Reduces control, address and data interface to a
single pin
Each DS2224 32–bit ROM is factory–lasered with a
unique serial number
DS2224 portion of ROM with custom code and unique
serial number available
Minimal operating power: 45 nanocoulombs per
transaction @1.5V typical
Less than 15 nA standby current at 25
°
C
Nonvolatile data retention easily achieved via low–
cost alkaline batteries or capacitors
Directly connects to a port pin of popular microcontrol-
lers
Operation from 1.2 to 5.5 volts
Popular TO–92 or SOT–223 surface mount package
Operates over industrial temperature range –40
°
C to
+85
°
C
DESCRIPTION
The DS2223 and DS2224 EconoRAMs are fully static,
micro–powered, read/write memories in low–cost
TO–92 or SOT–223 packages. The DS2223 is orga-
nized as a serial 256 x 1 bit static read/write memory.
The DS2224’s first 32 bits are lasered with a unique ID
code at the time of manufacture; the remaining 224 bits
are static read/write memory. Signaling necessary for
reading or writing is reduced to just one interface lead.
Both the DS2223 and DS2224 are not recommended
for new designs. However, the parts will remain avail-
able until the year 2003, at least.
PACKAGE OUTLINE
1
2
3
1
2
3
1
2
3
4
SOT–223
TOP VIEW
See Mech. Drawings
Section
BOTTOM VIEW
See Mech. Drawings
Section
TO–92
PIN CONNECTIONS
Pin 1
GND
Pin 2
DQ
Pin 3
V
CC
Pin 4
GND
– Ground
– Data In/Out
– Supply
– Ground
ORDERING INFORMATION
DS2223
256–bit SRAM – TO–92 Package
DS2223Z
256–bit SRAM – SOT–223 Package
DS2223T
1000 piece tape–and–reel of DS2223
DS2223Y
2500 piece tape–and–reel of DS2223Z
DS2224
32–bit serial number (ROM), 224–bit
SRAM – TO–92 Package
DS2224Z
32–bit serial number (ROM), 224–bit
SRAM – SOT–223 Package
DS2224T
1000 piece tape–and–reel of DS2224
DS2224Y
2500 piece tape–and–reel of DS2224Z
相關PDF資料 |
PDF描述 |
|---|---|
| DS2223Y | EconoRAM |
| DS2223Z | EconoRAM |
| DS2229-100 | x16 SRAM Module |
| DS2229-120 | x16 SRAM Module |
| DS2229-85 | x16 SRAM Module |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS2224Z+T&R | 功能描述:靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2227 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Flexible NV SRAM Stik |
| DS2227-070 | 功能描述:IC NVSRAM 4MBIT 70NS 72SIMM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
| DS2227-100 | 功能描述:IC NVSRAM 4MBIT 100NS 72SIMM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
| DS2227-120 | 功能描述:IC NVSRAM 4MBIT 120NS 72SIMM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
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