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參數資料
型號: DS35
廠商: IXYS Corporation
英文描述: Rectifier Diode Avalanche Diode
中文描述: 雪崩二極管整流二極管
文件頁數: 1/2頁
文件大小: 40K
代理商: DS35
2000 IXYS All rights reserved
1 - 2
V
RSM
V
900
1300
1300
1700
1900
V
(BR)min
x
V
RRM
V
-
-
1300
1750
1950
Anode
on stud
Cathode
on stud
DSI
35-08A
DSI
35-12A
DSAI
35-12A
DSAI
35-16A
DSAI
35-18A
V
800
1200
1200
1600
1800
DS
35-08A
DS
35-12A
DSA
35-12A
DSA
35-16A
DSA
35-18A
x
Only for Avalanche Diodes
Symbol
Test Conditions
Maximum Ratings
I
F(RMS)
I
F(AVM)
P
RSM
I
FSM
T
VJ
T
case
= 100 C; 180 sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10 s
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
= T
80
49
A
A
11
kW
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
650
690
600
640
A
A
A
A
I
2
t
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2100
2000
1800
1700
A
2
s
A
2
s
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
M
d
-40...+180
C
C
C
180
-40...+180
Mounting torque
4.5-5.5
40-49
Nm
lb.in.
g
Weight
15
V
RRM
= 800-1800 V
I
F(RMS)
= 80 A
I
F(AV)M
= 49 A
Features
G
International standard package,
JEDEC DO-203 AB (DO-5)
G
Planar glassivated chips
Applications
G
High power rectifiers
G
Field supply for DC motors
G
Power supplies
Advantages
G
Space and weight savings
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
Symbol
Test Conditions
Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
T
VJ
I
F
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
= T
VJM
; V
R
= V
RRM
= 150 A; T
VJ
= 25 C
4
mA
1.55
V
0.85
4.5
V
m
1.05
1.25
K/W
K/W
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
4.05
3.9
100
mm
mm
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS
DSA 35
35
DSI
DSAI 35
35
Rectifier Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AB
DS
DSA
DSI
DSAI
C
A
A
C
1/4-28UNF
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