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參數資料
| 型號： | DSEA16-06BC |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerDynFRED Epitaxial Diode ISOPLUS220 |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, ISOPLUS220, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 539K |
| 代理商： | DSEA16-06BC |
DSEA 16-06BC
DSEC 16-06BC
= 2x8 A
V
RRM
= 600 V
t
rr
= 30 ns
2005 IXYS All rights reserved
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
= 25
O
C and per diode unless otherwise specified
d
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e
Pulse test: pulse Width = 300
μ
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low cathode to tab capacitance (<15pF)
z
Planar passivated chips
z
Very short recovery time
z
Extremely low switching losses
z
Low I
-values
z
Soft recovery behaviour
z
Epoxy meets UL 94V-0
Applications
z
Antiparallel diode for high frequency
switching devices
z
Antisaturation diode
z
Snubber diode
z
Free wheeling diode in converters
and motor control circuits
z
Rectifiers in switch mode power
supplies (SMPS)
z
Inductive heating
z
Uninterruptible power supplies (UPS)
z
Ultrasonic cleaners and welders
Advantages
z
Avalanche voltage rated for reliable
operation
z
Soft reverse recovery for low EMI/RFI
z
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
V
RSM
V
V
RRM
V
Type
600
600
600
600
DSEA 16-06BC
DSEC 16-06BC
Preliminary Data Sheet
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
19
A
A
A
T
C
= 110°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
8
50
E
AS
T
VJ
= 25°C; non-repetitive
I
AS
= 0.9 A; L = 180 μH
0.1
mJ
I
AR
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
T
VJM
T
stg
-55...+175
°C
°C
°C
175
-55...+150
T
L
P
tot
V
ISOL
1.6 mm (0.063 in) from case for 10 s
T
C
= 25°C
50/60 Hz RMS; I
ISOL
≤
1 mA
260
60
2500
°
C
W
V~
F
C
mounting force with clip
11...65 / 2.5...15
N / lb
Weight
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
c
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
V
R
= V
RRM
60
μA
mA
0.25
V
F
d
I
F
= 8 A;
T
VJ
= 150°C
T
VJ
= 25°C
1.65
V
V
3.0
R
thJC
R
thCH
2.5
K/W
K/W
0.4
t
rr
I
F
= 1 A; -di/dt = 50 A/μs;
V
R
= 30 V; T
VJ
= 25°C
30
ns
I
RM
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
1.4
1.9
A
DSEA
DSEC
3
1
2
3
1
2
DS98825A (04/05)
ISOPLUS220
TM
E153432
G
DS
Isolated back surface
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PDF描述 |
|---|---|
| DSEC16-06BC | HiPerDynFRED Epitaxial Diode ISOPLUS220 |
| DSEA29-06AC | HiPerDynFRED Epitaxial Diode(正向電流30A的HiPerDynFRED外延型二極管) |
| DSEC16-02A | HiPerFRED Epitaxial Diode with common cathode and soft recovery |
| DSEC16-04AS | HiPerFREDTM Epitaxial Diode with common cathode and soft recovery |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DSEA29-06AC | 制造商:IXYS Corporation 功能描述:Diode Switching 600V 30A 3-Pin(3+Tab) ISOPLUS 220 制造商:IXYS Corporation 功能描述:DIODE FAST 30A ISOPLUS220 |
| DSEA3 | 制造商:MMD 制造商全稱:MMD Components 功能描述:HC-49/US Surface Mounted Crystal |
| DSEA59-06BC | 制造商:IXYS Corporation 功能描述:Diode Switching 600V 30A 3-Pin(3+Tab) ISOPLUS 220 制造商:IXYS Corporation 功能描述:DIODE FAST 60A ISOPLUS220 |
| DSEB1 | 制造商:MMD 制造商全稱:MMD Components 功能描述:HC-49/US Surface Mounted Crystal |
| DSEB12.0000WNS | 制造商:HOSONIC ELECTRONIC 功能描述:OSC DSEB 12mhz |
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