欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): DSEE55-24N1F
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: Dual HiPerFRED Epitaxial Diode
中文描述: 53 A, 1200 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, I4PAC-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 45K
代理商: DSEE55-24N1F
2001 IXYS All rights reserved
1 - 2
V
RRM
I
F(AV)M
= 55 A
t
rr
= 220 ns
= 2400 V
Dual HiPerFRED
TM
Epitaxial Diode
in ISOPLUS i4-PAC
TM
Advanced Technical Information
DSEE 55-24N1F
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
1
5
Features
HiPerFRED
TM
Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- enlarged creepage between pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
rectifiers
- high frequency rectifiers, output
rectifiers of switched mode power
supplies
- mains rectifiers with minimized
emission of disturbances
diodes in snubber networks
high voltage diodes using the series
connection in the component
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
c
V
RRM
2400
1200
V
V
I
FAV
I
F(AV)M
I
FSM
T
C
= 90°C; sine 180°
T
C
= 90°C; d = 0.5 rectangular
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
53
55
A
A
A
500
E
AS
I
AS
= 16 A; L
AS
= 180 μH; T
C
= 25°C; non repetitive
28
mJ
P
tot
T
C
= 25°C
(per diode)
200
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 40 A; T
VJ
= 25°C
T
VJ
= 125°C
2.0
1.5
2.5
V
V
I
R
V
R
= V
;
T
VJ
= 25°C
T
VJ
= 125°C
1
mA
mA
1
I
RM
t
rr
I
F
= 75 A; di
F
/dt = -750 A/μs; T
VJ
= 125°C
V
R
= 600 V
79
220
A
ns
R
thJC
(per diode)
0.63 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
c
Diodes connected in series
3
1
1
3
5
相關(guān)PDF資料
PDF描述
DSEE8-06CC HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二極管)
DSEI12-06A Fast Recovery Epitaxial Diode (FRED)
DSEI12-10A Fast Recovery Epitaxial Diode (FRED)
DSEI12 Fast Recovery Epitaxial Diode (FRED)(正向電流12A的快速恢復(fù)外延型二極管)
DSEI12-12A Fast Recovery Epitaxial Diode (FRED)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DSEE6-06CC 功能描述:整流器 6 Amps 600V 2.7 Rds RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEE8-06CC 功能描述:整流器 10 Amps 600V 1.75 Rds RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEE8-08CC 功能描述:二極管 - 通用,功率,開(kāi)關(guān) 8 Amps 400V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
DSEI 120-06A 制造商:IXYS 功能描述:Bulk
DSEI 120-12A 制造商:IXYS 功能描述:Bulk
主站蜘蛛池模板: 广宗县| 靖宇县| 丹凤县| 林口县| 余庆县| 谢通门县| 乌什县| 南和县| 通城县| 启东市| 满城县| 南城县| 漾濞| 博爱县| 屏东县| 朝阳市| 蓬莱市| 柳州市| 山阴县| 常熟市| 陆丰市| 富平县| 阳曲县| 温州市| 嘉祥县| 莲花县| 沅陵县| 滕州市| 顺昌县| 池州市| 乌兰浩特市| 鄂温| 绥德县| 油尖旺区| 龙里县| 鹿邑县| 乌拉特后旗| 泸水县| 盐亭县| 宣化县| 雷山县|