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參數資料
| 型號： | DSEI120-12A |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) |
| 中文描述： | 109 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | TO-247AD, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | DSEI120-12A |
2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
1200
1200
DSEI 120-12A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FAV
y
I
FRM
T
VJ
= T
T
C
= 60 C; rectangular, d = 0.5
T
C
= 95 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
100
109
75
tbd
A
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
600
660
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
540
600
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1800
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1450
1500
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
357
W
M
d
Mounting torque
0.8...1.2
Nm
Weight
6
g
Symbol
Test Conditions
Characteristic Values
max.
typ.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
3
mA
mA
mA
1.5
20
V
F
I
F
= 70 A;
T
VJ
=150 C
T
VJ
= 25 C
1.55
1.8
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.2
4.6
V
m
R
thJC
R
thCK
R
thJA
0.35
K/W
K/W
K/W
0.25
35
t
rr
I
F
= 1 A; -di/dt = 200 A/ s; V
R
= 30 V; T
VJ
= 25 C
40
60
ns
I
RM
V
= 350 V;
L 0.05 H; T
VJ
= 100 C
I
F
= 75 A; -di
F
/dt = 200 A/ s
25
30
A
DSEI 120
I
FAVM
= 109 A
V
RRM
= 1200 V
t
rr
= 40 ns
x
Chip capability,
y
limited to 70 A by leads
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
C
Features
G
International standard package
JEDEC TO-247 AD
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Anti saturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
G
Operating at lower temperature or
space saving by reduced cooling
Dimensions
See DSEI 60-12 on page D5 - 27
Fast Recovery
Epitaxial Diode (FRED)
A
TO-247 AD
C
C
A
A = Anode, C = Cathode
相關PDF資料 |
PDF描述 |
|---|---|
| DSEI120 | Fast Recovery Epitaxial Diode (FRED)(正向電流109A的快速恢復外延型二極管) |
| DSEI19 | Fast Recovery Epitaxial Diode (FRED)(正向電流20A的快速恢復外延型二極管) |
| DSEI19-06 | Fast Recovery Epitaxial Diode (FRED) |
| DSEI19-06AS | Fast Recovery Epitaxial Diode (FRED) |
| DSEI20 | Fast Recovery Epitaxial Diode (FRED)(正向電流17A的快速恢復外延型二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DSEI12-06A | 功能描述:整流器 600V 14A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEI12-06A | 制造商:IXYS Corporation 功能描述:DIODE FAST RECOVERY 14A |
| DSEI12-10A | 功能描述:整流器 1000V 12A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEI1212 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED) |
| DSEI12-12A | 功能描述:整流器 1200V 11A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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