- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376996 > DSEP15-12CR (IXYS CORP) HiPerDynFREDTM Epitaxial Diode with soft recovery PDF資料下載
參數(shù)資料
| 型號(hào)： | DSEP15-12CR |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerDynFREDTM Epitaxial Diode with soft recovery |
| 中文描述： | 15 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | ROHS COMPLIANT, PLASTIC, ISOPLUS247, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 21K |
| 代理商： | DSEP15-12CR |
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 μs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Features
G
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
G
Low cathode to tab capacitance (<25pF)
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
G
Isolated and UL registered E153432
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
A = Anode, C = Cathode
* Patent pending
ISOPLUS 247
TM
A
C
Isolated back surface *
C
A
2000 IXYS All rights reserved
1 - 1
DSEP 15-12CR
I
FAV
V
RRM
= 1200 V
t
rr
= 20 ns
= 15 A
V
RSM
V
V
RRM
V
Type
1200
1200
DSEP 15-12CR
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
50
15
tbd
A
A
A
T
C
= 130°C; rectangular, d = 0.5
t
P
< 10 μs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.0 A; L = 180 μH
V
A
= 1.25
·
V
R
typ.; f = 10 kHz; repetitive
110
A
0.1
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
50/60 Hz RMS; I
ISOL
1 mA
mounting force with clip
150
W
2500
V~
20...120
N
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 15 A;
V
R
= V
RRM
100
0.5
μA
mA
V
F
y
T
VJ
= 150°C
T
VJ
= 25°C
2.67
4.04
V
V
R
thJC
R
thCH
t
rr
1
K/W
K/W
with heatsink compound
0.25
I
F
= 1 A; -di/dt = 200 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
20
ns
I
RM
4.0
4.9
A
Preliminary Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DSEP29-06B | HiPerFREDTM Epitaxial Diode with soft recovery |
| DSEP29-06AS | HiPerFREDTM Epitaxial Diode with soft recovery |
| DSEP29-06A | HiPerFREDTM Epitaxial Diode with soft recovery |
| DSEP29-12A | HiPerFRED Epitaxial Diode with soft recovery |
| DSEP2X101-04A | HiPerFRED Epitaxial Diode with soft recovery |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSEP1821 | 制造商:IXYS Corporation 功能描述: |
| DSEP2129FH WAF | 制造商:ON Semiconductor 功能描述: |
| DSEP29-03A | 功能描述:整流器 29 Amps 300V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEP29-06A | 功能描述:整流器 29 Amps 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEP29-06AS | 功能描述:整流器 29 Amps 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。