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參數資料
| 型號： | DSEP |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFREDTM Epitaxial Diode with soft recovery |
| 中文描述： | HiPerFREDTM外延與軟恢復二極管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | DSEP |
2000 IXYS All rights reserved
1 - 2
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
G
International standard package
miniBLOC
G
Isolation voltage 2500 V~
G
UL registered E 72873
G
2 independent FRED in 1 package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low
EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
miniBLOC, SOT-227 B
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 2x 31-04A
I
FAV
V
RRM
= 400 V
t
rr
= 30 ns
= 2x 30 A
V
RSM
V
V
RRM
V
Type
400
400
DSEP 2x 31-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
100
30
A
A
T
C
= 105°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= tbd A; L = tbd μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
tbd
A
tbd
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
tbd
A
-40...+150
°C
°C
°C
150
-40...+150
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
100
W
2500
V~
M
d
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
V
R
= V
RRM
0.25
1.0
mA
mA
V
F
y
T
VJ
= 125°C
T
VJ
= 25°C
1.15
1.45
V
V
R
thJC
R
thCH
t
rr
1.15
K/W
K/W
0.1
I
F
= 1 A; -di/dt = 200 A/ s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/ s
T
VJ
= 100°C
30
ns
I
RM
6.8
A
Preliminary Data
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