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參數資料
| 型號： | DT456P |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 7.5 A, 30 V, 0.054 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 74K |
| 代理商： | DT456P |
D
S
11614 Rev. C-4
1 of 4
DT456P
DT456P
P-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
High Cell Density DMOS Technology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance
Thermal Characteristics
Maximum Ratings
25°C unless otherwise specified
Notes:
the
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
solder mounting surface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user’s board design.
1a. With 1 in
2
oz 2 oz. copper mounting pad R
JA = 42°C/W.
1b. With 0.0066 in
2
oz 2 oz. copper mounting pad R
JA = 95°C/W.
1c. With 0.0123 in
2
oz 2 oz. copper mounting pad R
JA = 110°C/W.
Characteristic
Symbol
V
DSS
V
GSS
Value
-30
±20
±7.5
±20
3.0
1.3
1.1
-65 to +150
Unit
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Note 1a
Note 1b
Note 1c
I
D
A
Maximum Power Dissipation
P
d
W
Operating and Storage Temperature Range
T
j
, T
STG
°C
Characteristic
Symbol
R
JA
R
JC
Value
42
12
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
D
G
D
S
A
B
C D
G
H
J
K
L
M
N
P
R
S
E
Mechanical Data
SOT-223 Plastic Case
Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
R
S
All Dimensions in mm
Max
6.30
6.71
2.90
3.10
6.71
7.29
3.30
3.71
2.22
2.35
0.92
1.00
1.10
1.30
1.55
1.80
0.025
0.102
0.66
0.79
4.55
4.70
—
10°
10°
16°
0.254
0.356
10°
16°
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