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參數(shù)資料
| 型號： | S6X8ES1RP |
| 元件分類： | 晶閘管 |
| 英文描述： | SCR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 297K |
| 代理商： | S6X8ES1RP |
173
2008 Littelfuse, Inc.
Revised: July 9, 2008
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
SxX8xSx Series
EV Series 0.8 Amp Sensitive SCRs
EV
0.8
A
SCRs
New device series offers high static dv/dt and lower turn
off (t
q) sensitive SCR with its small die planar construction
design. It is specically designed for GFCI (Ground Fault
Circuit Interrupter) and Gas Ignition applications. All
SCRs junctions are glass-passivated to ensure long term
reliability and parametric stability.
SxX8xSx Series
Description
Features
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
TO-92
T
C = 55°C
0.8
A
SOT-89
T
C = 60°C
0.8
A
SOT-223
T
L = 60°C
0.8
A
I
T(AV)
Average on-state current
TO-92
T
C = 55°C
0.51
A
SOT-89
T
C = 60°C
0.51
A
SOT-223
T
L = 60°C
0.51
A
I
TSM
Non repetitive surge peak on-state current
(Single cycle, T
J initial = 25°C)
TO-92
SOT-89
SOT-223
F= 50Hz
8
A
F= 60Hz
10
A
I2tI2t Value for fusing
t
p = 10 ms
F = 50 Hz
0.32
A2s
t
p = 8.3 ms
F = 60 Hz
0.41
A2s
di/dt
Critical rate of rise of on-state current I
G = 10mA
TO-92
SOT-89
SOT-223
T
J = 125°C
50
A/μs
I
GM
Peak Gate Current
t
p = 10 μs
T
J = 125°C
1.0
A
P
G(AV)
Average gate power dissipation
—
T
J = 125°C
0.1
W
T
stg
Storage junction temperature range
—
-40 to 150
°C
T
J
Operating junction temperature range
—
-40 to 125
°C
Main Features
Symbol
Value
Unit
I
T(RMS)
0.8
A
V
DRM /VRRM
400 to 800
V
I
GT
5 to 200
μA
A
K
G
Schematic Symbol
The SxX8xSx EV series is specically designed for
GFCI (Ground Fault Circuit Interrupter) and gas ignition
applications.
Applications
mount packages
capability > 10Amps
( V
DRM / VRRM )
capability - up to 800V
q)
< 25 μsec
microprocessor interface
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S6X8ES1 | SCR, TO-92 |
| S6X8ES2AP | SCR, TO-92 |
| S6X8ES2RP | SCR, TO-92 |
| S6X8ESAP | SCR, TO-92 |
| S6X8ESRP | SCR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S6X8ES2 | 功能描述:SCR Sen SCR 600V .8A 50uA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S6X8ES2AP | 功能描述:SCR Sen SCR 600V .8A 50uA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S6X8ES2RP | 功能描述:SCR Sen SCR 600V .8A 50 uA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S6X8ESAP | 功能描述:SCR 0.8 Amp Sensitive SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S6X8ESRP | 功能描述:SCR Sen SCR 600V .8A 200uA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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