| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1:$10.15000 10:$9.19200 25:$8.42560 100:$7.65980 250:$6.89384 500:$6.31934 |
| BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1:$10.15000 10:$9.19200 25:$8.42560 100:$7.65980 250:$6.89384 500:$6.31934 |
| IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | 1:$2.04000 10:$1.75100 25:$1.57560 100:$1.42960 250:$1.28372 500:$1.10866 |
| IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | 1,000:$0.84608 2,000:$0.78773 5,000:$0.75855 10,000:$0.72938 25,000:$0.71479 50,000:$0.70020 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
| IPB65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | 0 | 1:$5.58000 10:$5.02000 25:$4.55560 100:$4.09070 250:$3.71880 500:$3.25396 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 22A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 100 毫歐 @ 9.5A，4.5V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 1mA |
| 閘電荷(Qg) @ Vgs: | - |
| 輸入電容 (Ciss) @ Vds: | 1500pF @ 25V |
| 功率 - 最大: | 95W |
| 安裝類型: | * |
| 封裝/外殼: | * |
| 供應商設備封裝: | * |
| 包裝: | * |