| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BUZ31 H | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220-3 | 0 | 500:$1.07012 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 5,000:$0.84149 10,000:$0.80913 25,000:$0.79294 50,000:$0.77676 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1,000:$0.82621 2,000:$0.76923 5,000:$0.74074 10,000:$0.71225 25,000:$0.69801 50,000:$0.68376 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續漏極(Id) @ 25° C: | 14.5A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 200 毫歐 @ 9A，5V |
| Id 時的 Vgs(th)（最大）: | 4V @ 1mA |
| 閘電荷(Qg) @ Vgs: | - |
| 輸入電容 (Ciss) @ Vds: | 1120pF @ 25V |
| 功率 - 最大: | 95W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-220-3 |
| 供應商設備封裝: | PG-TO220-3 |
| 包裝: | 管件 |